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| GBU8005C thru GBU810C SILICON BRIDGE RECTIFIERS REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 8.0 Amperes GBU-C .437(11.1) .430(10.9) .874(22.2) .860(21.8) .154(3.9) .146(3.7) .232(5.9) .224(5.7) .401(10.2) .392(9.80) .156(3.95) .126(3.2)*45 .148(3.75) CHAMFER FEATURES Surge overload rating -200 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Plastic material has U/L flammability classification 94V-0 Mounting postition:Any .752(19.1) .720(18.3) .079(2.0) .063(1.6) .720(18.29) .680(17.27) .047(1.2) .035(0.9) .100(2.54) .085(2.16) .126(3.2) .114(2.9) .080(2.03) .065(1.65) .210 .190 (5.3) (4.8) .210 .190 (5.3) (4.8) .210 .190 (5.3) (4.8) .022(.56) .018(.46) Dimensions in inches and (milimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave ,60Hz, resistive or inductive load. For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward (with heatsink Note 2) Rectified Current @ TC=100 (without heatsink) Peak Forward Surage Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load (JEDEC Method) Maximum Forward Voltage at 4.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage I2t Rating for Fusing (t<8.3ms) Typical Junction Capacitance Per Element (Note1) Typical Thermal Resistance (Note2) Operating Temperature Range Storage Temperature Range @ TJ=25 @ TJ=125 SYMBOL VRRM VRMS VDC I(AV) GBU 8005C 50 35 50 GBU 801C 100 70 100 GBU 802C 200 140 200 GBU 804C 400 280 400 8.0 3.2 200 1.0 10 500 166 60 2.2 -55 to +125 -55 to +150 GBU 806C 600 420 600 GBU 808C 800 560 800 GBU 810C 1000 700 1000 UNIT V V V A IFSM VF IR I2t CJ RJC TJ TSTG A V A A2s pF /W NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink. ~ 285 ~ RATING AND CHARACTERTIC CURVES GBU8005C thru GBU810C SERIES FIG.2-MAXIMUM NON-REPETITIVE SURGE CURRENT FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 10 PEAK FORWARD SURGE CURRENT, AMPERES WITH HEATSINK 200 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) 8.0 6.0 4.0 2.0 0.00 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 150 WITHOUT HEATSINK 100 50 0 0 2 5 0.1 0 20 40 60 80 100 120 140 10 20 50 100 CASE TEMPERATURE, C NUMBER OF CYCLETS AT 60Hz FIG.4-TYPICAL FORWARD CHARACTERISTICS FIG.3-TYPICAL JUNCTION CAPACITANCE 1000 INSTANTANEOUS FORWARD CURRENT, (A) 10 CAPACITANCE,(pF) 100 1.0 10 0.1 TJ = 25C PULSE WIDTH 300us TJ=25C,f=1MHZ 1.0 1.0 10.0 REVERSE VOLTAGE,(VOLTS) 100 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5-TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT ,(uA) TJ=125C 100 TJ=100C 10 TJ=50C 1.0 TJ=25C 0.1 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) ~ 286 ~ |
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